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FDC6420C
September 2001
FDC6420C
20V N & P-Channel PowerTrench(R) MOSFETs
General Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
* Q1 3.0 A, 20V. RDS(ON) = 70 m @ VGS = 4.5 V RDS(ON) = 95 m @ VGS = 2.5 V * Q2 -2.2 A, 20V. RDS(ON) = 125 m @ VGS = -4.5 V RDS(ON) = 190 m @ VGS = -2.5 V * Low gate charge * High performance trench technology for extremely low RDS(ON). * SuperSOT -6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).
Applications
* * * DC/DC converter Load switch LCD display inverter
D2 S1 D1
Q2(P)
4
G2
3 2 1
Q1(N)
5 6
SuperSOT
Pin 1
TM
-6
S2 G1
SuperSOTTM-6
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25 C unless otherwise noted
o
Parameter
Q1
20 12
(Note 1a)
Q2
-20 12 -2.2 -6 0.96 0.9 0.7 -55 to +150
Units
V V A
3.0 12
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
W C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
130 60
C/W C/W
Package Marking and Ordering Information
Device Marking .420 Device FDC6420C Reel Size 7'' Tape width 8mm Quantity 3000 units
(c)2001 Fairchild Semiconductor Corporation
FDC6420C Rev C(W)
FDC6420C
Electrical Characteristics
Symbol Parameter Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
TA = 25C unless otherwise noted
Test Conditions
VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Ref. to 25C ID = -250 A, Ref. to 25C VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = 12 V, VDS = 0 V VGS = -12 V, VDS = 0 V VGS = -12 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Ref. To 25C ID = -250 A, Ref. to 25C VGS = 4.5 V, ID = 3.0 A VGS = 2.5 V, ID = 2.5 A VGS = 4.5 V, ID = 3.0 A,TJ=125C VGS = -4.5 V, ID = -2.2 A VGS =- 2.5 V, ID = -1.8 A VGS= - 4.5 V,ID=-2.2 A,TJ=125C VGS = 4.5 V, VDS = 5 V VDS = -5 V VDS = 5 V ID = 2.5 A ID = -2.0A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
Min
20 -20
Typ
Max Units
V 13 -11 1 -1 100 100 -100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
Q1 Q2 Q1 Q2 Q1
0.5 -0.6
0.9 -1.0 -3 -3 50 66 71 100 145 137
1.5 -1.5
V mV/C
70 95 106 125 190 184
m
Q2
ID(on) gFS
On-State Drain Current Forward Transconductance
Q1 Q2 Q1 Q2
12 -6 10 6
A S
VGS = -4.5 V, VDS = -5 V
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Q1 Q2 Q1 Q2 Reverse Transfer Capacitance Q1 Q2 VDS=10 V, V GS= 0 V, f=1.0MHz VDS=-10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=-10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=-10 V, V GS= 0 V, f=1.0MHz 324 337 82 88 42 51 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 2)
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
For Q1: VDS =10 V, VGS= 4.5 V,
5 I DS= 1 A RGEN = 6 9 7 12 13 10 1.6 5
10 18 14 22 23 20 3 10 4.6
ns ns ns ns nC nC nC
For Q2: VDS =-10 V, I DS= -1 A VGS= -4.5 V, RGEN = 6
For Q1: VDS =10 V, I DS= 3.0 A VGS= 4.5 V, For Q2: VDS =-10 V, I DS= -2.2 A VGS= -4.5 V,
3.3 3.7 0.95 0.68 0.7 1.3
FDC6420C Rev C(W)
FDC6420C
Electrical Characteristics
Symbol
IS VSD
TA = 25C unless otherwise noted
Parameter
Test Conditions
Q1 Q2
(Note 2) (Note 2)
Min
Typ
Max Units
0.8 -0.8 A V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Q1 Q2 VGS = 0 V, IS = 0.8 A VGS = 0 V, IS = 0.8 A
0.7 -0.8
1.2 -1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 130 C/W when mounted on a 0.125 2 in pad of 2 oz. copper.
b) 140 C/W when 2 mounted on a .004 in pad of 2 oz copper
c) 180 C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDC6420C Rev C(W)
FDC6420C
Typical Characteristics: N-Channel
12
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2
VGS = 4.5V ID, DRAIN CURRENT (A) 10 3.5V 8 6 4 2 0 0
3.0V
2.5V
VGS = 2.0V
1.8 1.6
2.0V
1.4
2.5V
1.2
3.0V
3.5V 4.5V
1
1
2
3
0.8 0 2 4 6 8 10 12 ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.22 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 3.0A VGS = 4.5V 1.4
ID = 1.5A
0.18
1.2
0.14
TA = 125 C
0.1
o
1
0.8
0.06
TA = 25 C
0.02
o
0.6 -50 -25 0 25 50 75 100
o
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
10 IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VDS = 5V
ID, DRAIN CURRENT (A) 8
TA = -55oC
25 C
o
VGS = 0V
10 1 0.1 0.01 0.001 0.0001
125oC
6
TA = 125oC 25 C -55oC
o
4
2
0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC6420C Rev C(W)
FDC6420C
Typical Characteristics
5 VGS , GATE-SOURCE VOLTAGE (V)
450 ID = 3A VDS = 5V 15V 10V 360 CAPACITANCE (pF) CISS 270 f = 1 MHz VGS = 0 V
4
3
2
180 COSS 90 CRSS
1
0 0 1 2 Qg, GATE CHARGE (nC) 3 4
0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) 5
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT 10ms 100ms
1ms
4
SINGLE PULSE RJA = 180C/W TA = 25C
3
1 DC 0.1 VGS = 4.5V SINGLE PULSE RJA = 180oC/W TA = 25oC 0.01 0.1 1
1s 10s
2
1
0 10 100 0.1 1 10 t1, TIME (sec) 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
FDC6420C Rev C(W)
FDC6420C
Typical Characteristics: P-Channel
6 -3.0V -2.5V -3.5V 4 3 -2.0V 2 -1.8V 1 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS =- 4.5V -ID, DRAIN CURRENT (A) 5 2.75 2.5 VGS = -2.0V 2.25 2 1.75 1.5 1.25 1 0.75 0 1 2 3 4 5 6 -ID, DRAIN CURRENT (A) -2.5V -3.0V -3.5V -4.5V
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with Drain Current and Gate Voltage.
0.4 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -2.2A VGS = -4.5V 1.4
ID = -1.1 A
0.35 0.3 0.25 0.2
1.2
1
TA = 125 C
0.15 0.1
o
0.8
TA = 25 C 0.6 -50 -25 0 25 50 75 100
o
o
125
150
0.05 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 13. On-Resistance Variation with Temperature.
5 VDS = -5V -ID, DRAIN CURRENT (A) 4 TA = -55 C 125oC
o
Figure 14. On-Resistance Variation with Gate-to-Source Voltage.
10 VGS = 0V 1 TA = 125oC 0.1 25 C 0.01 -55 C 0.001
o o
25 C
o
3
2
1
-IS, REVERSE DRAIN CURRENT (A)
0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC6420C Rev C(W)
FDC6420C
Typical Characteristics
5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -2.2A 4
VDS =- 5V -10V CAPACITANCE (pF) -15V
600 f = 1MHz VGS = 0 V 500 400 CISS 300 200 COSS 100 CRSS 0
3
2
1
0 0 1 2 3 4 5 Qg, GATE CHARGE (nC)
0
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
10 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 100ms 1 10s DC 1s 10ms P(pk), PEAK TRANSIENT POWER (W) 5
Figure 18. Capacitance Characteristics.
4
SINGLE PULSE RJA = 180C/W TA = 25C
3
2
0.1
VGS = -4.5V SINGLE PULSE o RJA = 180 C/W TA = 25 C
o
1
0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.1 1 10 t1, TIME (sec) 100 1000
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
RJA(t) = r(t) * RJA RJA = 180C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDC6420C Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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